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 BFS17W
NPN Silicon RF Transistor For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA
3
Junction temperature Ambient temperature Storage temperature Thermal Resistance
1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance
thJA
1
Junction - soldering point 2)
2 1
VSO05561
Type BFS17W
Maximum Ratings Parameter
Marking MCs 1=B
Pin Configuration 2=E 3=C
Package SOT323
Symbol VCEO VCBO VEBO IC ICM Ptot Tj TA Tstg
Value 15 25 2.5 25 50 280 150 -65 ... 150 -65 ... 150
Unit V
Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current, f = 10 MHz Total power dissipation TS 93 C 1)
mA mW C
RthJS
205
K/W
Jul-13-2001
BFS17W
Electrical Characteristics a TA = 25C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base cutoff current VCB = 10 V, IE = 0 VCB = 25 V, IE = 0 Emitter-base cutoff current VEB = 2.5 V, IC = 0 DC current gain IC = 2 mA, VCE = 1 V IC = 25 mA, VCE = 1 V Collector-emitter saturation voltage IC = 10 mA, IB = 1 mA VCEsat hFE 20 20 70 0.1 150 0.4 IEBO ICBO 0.05 10 100 V(BR)CEO 15 typ. max.
Unit
V A
-
V
2
Jul-13-2001
BFS17W
Electrical Characteristics at TA = 25C, unless otherwise specified. Symbol Values Parameter min. AC characteristics Transition frequency IC = 2 mA, VCE = 5 V, f = 200 MHz IC = 25 mA, VCE = 5 V, f = 200 MHz Collector-base capacitance VCB = 5 V, f = 1 MHz Collector-emitter capacitance VCE = 5 V, f = 1 MHz Input capacitance VEB = 0.5 V, IC = 0 , f = 1 MHz Output capacitance VCE = 5 V, VBE = 0 , f = 1 MHz Noise figure IC = 2 mA, VCE = 5 V, f = 800 MHz, Transducer gain IC = 20 mA, VCE = 5 V, ZS = ZL = 50 , f = 500 MHz Linear output voltage IC = 14 mA, VCE = 5 V, dim = 60 dB, f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50 Third order intercept point IC = 14 mA, VCE = 5 V, ZS = ZL = 50 , f = 800 MHz IP3 23 V01=V02 100 F 3.5 5 Cobs 1.5 Cibo 1.45 Cce 0.26 Ccb fT 1 1.3 1.4 2.5 0.6 0.8 typ. max.
Unit
GHz
pF
dB
ZS = 0
|S21e|2
-
12.7
-
mV
dBm
3
Jul-13-2001
BFS17W
Total power dissipation Ptot = f(TS)
320
mW
240
P tot
200
160
120
80
40
0 0
15
30
45
60
75
90 105 120
C 150 TS
Permissible Pulse Load RthJS = f (tp )
Permissible Pulse Load
Ptotmax/P totDC = f (tp)
10 3 10 3
K/W
Ptotmax / PtotDC
-
10 2
10 2
10 1
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
RthJS
10 1
10 0 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
10 0 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
tp
4
Jul-13-2001
BFS17W
Collector-base capacitance Ccb = f (VCB )
Transition frequency f T = f (I C)
V CE = Parameter
f = 1MHz
1.3
pF
3.0
1.1 1.0
GHz
10V 5V 3V
Ccb
0.9 0.8 0.7
2.0
fT
2V
1.5 0.6 0.5 0.4 0.3
1V
1.0
0.2 0.1 0.0 0 4 8 12 16 20
V
0.5
0.7V
26
0.0 0
5
10
15
20
mA
30
VCB
IC
5
Jul-13-2001


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